Calculated bond lengths between N atoms at the vertices of triangular vacancies and relative energies of two types of vacancy structures are given in Table 1.
In this paper, we examined the buckling of perfect and defective armchair boron nitride nanotubes with three types of vacancy defects, i.e. B- and N- single vacancy defects and B N- double vacancy defect, using molecular dynamics simulations.
The effect of different types of vacancy defects at various locations on the critical buckling loads and strains is studied for zigzag and armchair nanotubes with various aspect ratios (Length/Diameter).
For two types of vacancy defects in the SiNW, a 'center defect' and a 'surface defect', we found that a center-defect reduces thermal conductance much more than a surface defect.
For many types of vacancy and SI configurations, structural properties resemble those described in previous extended studies [13, 14] for their counterparts on single-walled carbon nanotubes (SWC-NTs).
The mechanical behaviour of non-chiral and chiral single-walled carbon nanotubes containing different percentage (up to 10%) and types of vacancy defects is studied under tensile, bending and torsional loading.
There, besides the various types of vacancy centers (i.e., VS, VMo, VS2, VMoS3, VMoS6), eye catching was the demonstration of the presence of various antisite centers like SMo (a sulfur atom substituting for a Mo site), S2Mo, MoS, and MoS2.
The type of vacancies formed depends upon the synthesis conditions and techniques used [24].
These rearrangements occur on all of the surfaces, demonstrating that they are independent of the presence and type of vacancies.
