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The heterojunctions using both p type and n type silicon were studied.
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P-type silicon <100> wafers were purchased from Silicon Valley Microelectronics Inc. (CA, USA) and used as substrates.
We both knew aluminum didn't make ohmic contacts to n-type silicon.
The Caltech team created a checkerboard pattern of alternating p- and n-type silicon squares.
Aboelfotoh, M. O. Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon.
The presence of surfactant showed strong effects on p-type silicon, whereas the p+-type silicon polarization curve changed negligibly with a surfactant.
The space charge layer mainly determines the dissolution process, since p-type silicon, which has a smaller capacity, was more affected than p+-type silicon.
Some of the possibilities in use include: n-type silicon over p-type silicon, p-type silicon over n-type silicon, lightly doped over heavily doped of either type, lightly doped over heavily doped buried layer patterns, conducting silicon layers over insulating surfaces, silicon layers with controlled dopant profiles, and silicon selectively deposited through oxide.
Results are presented for n-type silicon in fluoride and KOH solutions.
Experimental data obtained with n- and p-type silicon are further evaluated.
Copper filling into mesopores formed in highly doped p-type silicon was investigated.
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