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So, in this study, the type of dislocation loops is interstitial.
There are very few reports of this type of dislocation with these implants.
From the references listed in these published articles, we retrieved other publications on this type of dislocation.
Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.
A model for the occurrence of the former type of dislocation boundaries is proposed.
Because of a high incidence of related complications such as neurovascular damages early recognition and treatment of this type of dislocation is required by physicians.
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They are found to be strongly correlated to the type of dislocations as identified from TEM.
Line direction of the two types of dislocations are 1/2[110] and 1/2[1(bar {1} 0], so both type of dislocations are near-edge dislocations in the (001) interface plane and interfacial misfit of approximately 0.6% may exist between γ/r in (001) plane ( Zhang et al. 2001).
Among the possible slip systems for these type of dislocations, the system has the lowest d/|b| ratio, giving a line direction of [0001].
Before discussing the lateral ordering of QDs on the MD networks induced by the TS- and CS-GaInP and -GaInAs layers, it is necessary to evaluate the critical thickness and the type of dislocations generated.
Open image in new window Fig. 8 Effects of interlayer number on a edge, b screw, and c mixed type of dislocations generation in 1/3 < 11 23 > (11 22) slip of step-graded In0.4Ga0.6N/GaN heteroepitaxy.
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