Sentence examples for two test structure from inspiring English sources

There were two test structure channels used.

The application of these approaches is illustrated on two test structures using the gradient method to solve the resulting optimization problem.

Both existing and some new methods proposed by the present authors [A.S. Phani, J. Woodhouse, Viscous damping identification in linear vibration, Journal of Sound and Vibration 303 (3–5) (2007) 475 500] are applied to experimental data measured on two test structures: a coupled three cantilever beam with moderate modal overlap and a free free beam with low modal overlap.

Fig. 7 shows normal stress in Y direction along a cut-line (shown in inset figure) close to the top of the bottom M1 metal line for the two test structures (a) single crystal and (b) polycrystal Cu line.

Two test structures (a) single crystal copper and (b) polycrystalline copper were created to study the impact of microstructure and Cu anisotropy on the evolution of stress levels with an applied thermal stress.

Pressure (negative hydrostatic stress) levels were observed for the two test structures Fig. 8a crystalline test structure, without Cu grains by using isotropic elastic constants of Cu from Table 1 and Fig. 8b with polycrystalline Voronoi tessellation based microstructures of Cu using anisotropy in the elastic constants of Cu and textured grain orientation.

The corresponding damages are compared to those obtained from probabilistic load sets for eight test structures.

The epitaxial sequence for the three test structures is essentially identical except for the growth of the active region.

The epitaxy for the three test structures all starts with a 200-nm-thick n-type GaAs buffer layer (2 × 1018 cm−3) followed by a 400-nm n-type (5 × 1017 cm−3) AlowerGa0.65As lower cladding layer, and above this is an undoped active region, followed by a 400-nm p-type (5 × 1017 cm−3) Al0.35Ga0.65As upper cladding layer and finally a 100-nm highly p-doped (1 × 1019 cm−3) GaAs contact layer.

Figure 5 shows the two test device structures: reference structure using bare-Si in Figure 5a and MWCNT etch-masked Si with HMDS dispersion in Figure 5b.

Two test device structures are fabricated with active regions of bare-Si as a reference and MWCNT etch masked Si with HMDS dispersion.