Sentence examples for tunnelling field from inspiring English sources

In this paper, we propose and analyze a graphene tunnelling field effect transistor (GTFET) with a gapped graphene in the channel and gapless graphene in the source/drain regions.

Several forms of thin-film LMF emitter exist: in each case the situation geometry ensures that sufficient field enhancement occurs at the 'tip' of the emitting feature for the emission process to be some form of tunnelling field electron emission (probably 'cold' in some cases, 'hot' in others).

Moreover, we compare the performance of this structure with two other monolayer graphene based tunnelling field-effect transistors (GFETs) including gapless and finite band gap graphene across the source, channel and drain regions.

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour.

The investigation relates the level of structural distortion and damage to different tunnel field conditions.

The relationship developed can be used practically to assess the structural damage in the design stage of tunnel constructions under a range of tunnel field conditions.

Two different structures, brick-bearing and brick-infilled frame structures, were considered, and the distortion and cracking induced in the structures was related to different tunnel field conditions.

For the first time, a distinctive approach based on electrically doped concept is used for the formation of novel double gate tunnel field effect transistor (TFET).

Brick-bearing and brick-infilled frame structures were considered, and the distortion and cracking induced in the structures were related to different tunnel field conditions.

This article presents an outline and scrutiny of the Doping-less Cantilever Based Pressure Sensor using tunnel field effect transistor technology.

The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions.