Sentence examples for tunnel field from inspiring English sources

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour.

The investigation relates the level of structural distortion and damage to different tunnel field conditions.

Two different structures, brick-bearing and brick-infilled frame structures, were considered, and the distortion and cracking induced in the structures was related to different tunnel field conditions.

For the first time, a distinctive approach based on electrically doped concept is used for the formation of novel double gate tunnel field effect transistor (TFET).

Brick-bearing and brick-infilled frame structures were considered, and the distortion and cracking induced in the structures were related to different tunnel field conditions.

The relationship developed can be used practically to assess the structural damage in the design stage of tunnel constructions under a range of tunnel field conditions.

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics.

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET).

In this work, we perform a comparative analysis between single and dual metal dielectrically modulated tunnel field-effect transistors (DMTFETs) for the application of label free biosensor.

We report a temperature independent subthreshold slope (SS) of ∼47 mV/dec at low temperature in a triple top gate graphene tunnel field-effect transistor (TFET).

GaAs nanostructures are becoming more widespread in many applications including optoelectronic devices [1], solar cells [2], light-emitting diodes (LEDs) [3], tunnel field-effect transistors (TFETs) [4], thermoelectric devices [5], and biosensing [6].