Sentence examples for trench structure from inspiring English sources

Continental drift (the movement of large plates of Earth's crust) created a distinct island arc and oceanic trench structure by the Carboniferous Period (about 359 to 299 million years ago), when deposition began in the downwarps (trenches) of the sedimentary rocks that today make up some three-fourths of New Zealand.

The plasma damage on porous low-k films at the sidewall and bottom of the trench structure was compared by the design of a simple trench structure.

Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented.

Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure.

Therefore, O2 plasma-induced damage on porous low-k films is not increased as the trench structure is miniaturized.

To improve the breakdown voltage, we propose a SOI-based LDMOSFET with a trench structure in the drift region.

This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal microelectromechanical system (MEMS) applications using Si-on-insulator (SOI) membrane and trench structures.

In this paper, the process and layout optimizations for improving the isolation performance of deep trench structures on SOI substrate are proposed.

In aspect of layout structure, a voltage drop model of double trench structures is presented and verified by the experimental results, which indicates that breakdown voltage of double trench is a function of trench spacing.

Due to the promising TFTR results along with results obtained at the University of Illinois at Urbana-Champaign [6], suitably designed trench structures holding liquid lithium could be an appropriate fast flow candidate for PFC modules in future fusion devices.

In this report two-dimensional particle-in-cell (PIC) simulations for PIII treatment of trench structures with different tr/miratios are presented, encompassing the range of mi=4 131 (corresponding to He+ Xe+), at a pulse rise time of 0.5 μs and a pulse voltage of −45 kV.