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Deep-level transient spectroscopy.
Laplace deep level transient spectroscopy.
Fig. 4 Ultrafast transient spectroscopy of ITO.
Interface trap density (D it) was measured by deep-level transient spectroscopy (DLTS).
The trap model parameters are extracted from Deep Level Transient Spectroscopy (DLTS) characterization.
The TD formation has been verified by Deep Level Transient Spectroscopy (DLTS) measurements.
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Primary Lumi-R formation for Cph1Δ has been studied with both electronic and vibrational transient spectroscopies, often with contradictory conclusions.
In addition the optical properties of InN NWs such as their steady-state photoluminescence (PL) spectra have also been measured [14, 19 23] but no detailed, time-resolved-transient spectroscopy measurements have been carried out as in the case of other semiconductor NWs such as InP [24], CdS [25] and GaN [13].
Thus, microsecond to millisecond transient absorption spectroscopy and fluorescence correlation spectroscopy (FCS) studies are exceedingly helpful in identifying candidate fluorophores and guiding secondary laser selection.
Transient absorption spectroscopy.
The above findings are consistent with the experimental results obtained using transient THz spectroscopy [51].
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