Sentence examples for total trapping from inspiring English sources
The trap depth (defined as the difference between the potential minimum at the trap center and the nearest maximum in the 1D potential cuts) is 11.29 eV in the x dimension and 2.43 eV in the y dimension at Ω=2π×3.275 MHz and V RF,pp=800 V. Fig. 3 a Total trapping potential around the trap center for Ca + ions.
The results showed that the proposed ANN model had a high prediction performance with a high coefficient of determination (R2) of over 0.99 on comparing with the target values, a low MAPE (mean absolute percentage error) of 1.26%, and RMSE (root mean square error) of 0.41 for TEI (total trapping efficiency index).
Packed column results were compared with good agreement to theoretical predictions of NAPL-product mobilization using the total trapping number, NT.
These two dimensionless numbers were combined by Jin (1995) into a total trapping number (N T) to examine residual mobilization in an arbitrary flow regime having both horizontal and vertical components of flow.
The additional NAPL source zones were created in the direction transverse to flow in aquifer 2, which explains the higher mass flux relative to aquifer 1. Analysis using a total trapping number indicates that mobilization of NAPL trapped in the two coarsest sand fractions is possible when saturation is below 0.5 and 0.4, respectively.
Flushing of aquifer cells with less than 2.5 pore volumes of a 4%T800 solution achieved TCE mass recoveries ranging from 66 to 85%, with only slight TCE-DNAPL mobilization (< 5%) occurring when the total trapping number exceeded 2 × 10− 5.
The total amount trapped might however be reduced if CO2, H2O or pore space are limiting factors.
Therefore, the improved stability in HZO-TFT can be caused by the reduction in total traps causes.
The groynes acted as total traps, the beach surveys were extended to an adequate depth, and cross-shore sediment transport did not cause appreciable net sand losses into the entrance channel.
All the trap sites below E F must be filled with electrons before any move to the E F level in the forbidden bandgap region, so the rate of change in E F with respect to V GS (d(E a)/d(V GS)) is roughly inversely proportional to the magnitude of the total trap density, including the DOS of a semiconductor film (N SS) and an interfacial trap density (N it).
