Sentence examples for top p from inspiring English sources

This mechanism leads to the creation of a positive fixed charge on the pixel surface, which can next deplete the top P layer of the pinned photodiode.

Similar to the first transmission, the data rate is determined by the top p u percent users' channel conditions in each time transmission.

Lu [27] proposed a heuristic metric that considers the trade-off in accuracy and diversity to select the top p percent of ensemble members, depending on their resource availability and tolerable waiting time.

To fabricate AlGaAs/GaAs heterojunctions, Al0.8Ga0.2As is used for the top p type segment for axial pin junctions and the outer p type shell for radial pin junctions; the other regions of the NWs are made of GaAs.

And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells.

In the axial p-i-n NW, the intrinsic region is designed to be several times longer than the two doping segments to avoid the recombination losses in the top p segment and enhance the effective absorption.

With a proper structure design by including a thin top p-layer and a graded AlxGa1−xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased.

For axial junction NWs, the lengths of top p-regions and bottom n regions are 150 and 200 nm, respectively.

However, for GaAs NWs, the conversion efficiency decreases linearly with the increase of p-region length, due to the increasing number of photocarriers generated in top p-region.

The performance for GaN-based light-emitting diodes (LEDs) with specially designed composite electron blocking layers (CEBLs) that are inserted between the InGaN/GaN multiple quantum wells (MQWs) and the top p-GaN layer was studied intensively.

However, the short circuit current enhancement still exists in AlGaAs/GaAs NWs even with a high SRV of 107 cm/s, which comes from the suppressed recombination at the top p-region and the top contact.