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The top gate electrode was Ti/Au (5/40 nm).
The top gate dielectric comprised an AlOx/HfO2 stack.
Most transistor device fabrication processes use an oxide layer for top gate.
The growth process is also discussed with respect to TFT design: top gate or bottom gate.
By applying a voltage to a top gate, the channels can be depleted electrostatically.
The difference of top gate voltages between on-current (10−7A) and off-current (10−12A) is specified as ΔVon−off, and the top-gate voltage for the on-current is defined as the threshold voltage.
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Will muffin-top-gate cause other immigrant parents to join their Democratic-leaning children?
The Ru film (oxidized in the air) is used as a semitransparent top-gate electrode22.
The n-type transistor fabrication is finished by inkjet-printing top-gate electrodes.
In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors.
Starting from a conventional single-bottom-gate transistor on a flexible plastic sheet (Fig. 1a), we fabricated a dual-gate transistor by depositing a top-gate dielectric and inkjet-printing a top-gate Ag electrode on the top (Fig. 1b).
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