Sentence examples for tin buffer from inspiring English sources

For the IBAD BN film, a TiN buffer layer has been built between the BN film and silicon substrate.

The SEM observations reveal that the Ni catalyst films and the TiN buffer layer deposited at ambient temperature were found to be smooth and homogenous.

HA films were obtained by pulsed laser deposition on Si wafers and polished Ti 5Al 2.5Fe substrates coated with TiN buffer layers.

Using reactive magnetron sputter deposition, the TiSiN layers were grown at 550 °C and the TiN buffer layers at 900 °C.

The coating had a special structure with a TiN buffer layer, TiSiN/Ag multilayers that possess alternating TiSiN (45 nm) and Ag (12 nm) layers, and TiSiN coating interlayers of 120 nm thickness for a total thickness of 1.7 μm.

Similar TaN films deposited at 950 °C, however, were (001 -oriented hexagonal (h-)TaN on Al2O3(001 -oriented5 nm away from rs-TiN(111) buffer layers, including in superlattices withexagonalaN layers.

Long term galvanostatic charge-discharge cycling tests proved that the carbon obtained from MPNVF precursor allows better encapsulation of tin nanograins in the buffer matrix.

Nucleation, formation and growth of thin oxide films on tin in a borate buffer solution pH 8.2 were studied using potentiodynamic and galvanostatic techniques.

The tin passivation in borate buffer was studied using potentiodynamic curves recorded at high scanning rate (9 V min−1, 3.6 V min−1).

The anodic oxidation of tin in 0.2 M borate buffer solution has been studied by potentiodynamic, potentiostatic and galvanostatic techniques.

In some experiments a buffer layer of TiN was introduced by pulsed laser deposition before HA coating.