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The manufacturing variability is modeled via a thresholding technique in which the threshold field is represented by a reduced dimensional random field.
Here, we check the bunch parameters for giving the threshold field Ebl.
The Kondo splitting appears only above a threshold field as predicted by theory.
The lightly doped a-C N H film exhibited lower threshold field emission volta-C N Hn heavy nitrogen doped films.
Field emission studies revealed that the BDD film grown on rhenium substrate had the low threshold field (3.3 v/μm).
It was shown that the threshold field of the DLC films was approximately 3 15 V/μm.
The threshold field is 3.2 V/cm, defined at an emission current density of 10−6 A/cm2.
Electron emission was observed above a low threshold field with excellent stability even in vacuum to 10−7 torr.
The considered operation conditions result, in comparison to III V semiconductor devices, from the higher values of threshold field for intervalley transfer of electrons.
Interestingly, a much higher laser energy (>362.5 mJ/cm2) would reverse this effect by forming multiple continuous conductive sp2 channels and thereby reduce the threshold field sharply again.
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Therefore they have even more a low turn-on and threshold-field electronic field, high field enhancement factor, high current stability and high luminance.
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