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This device shows a typical bipolar resistive switching characteristic.
This device shows just how versatile Intel made the Atom.
This device shows promise in end-stage heart failure for permanent implantation and bridge to transplantation.
My expectations where low but quick I discovered that this device shows promise.
Compared with SPUV-PDs based on bare ZnO nanorod arrays, this device shows improved photoresponsivity and higher sensitivity.
This device shows forming-free I-V characteristics under a lowest CC of 0.1 μA with a high resistance ratio of >104.
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This device showed a negative capacitance at higher frequencies.
Compared with other graphene-based sensors, this device showed more rapid response to NO2.
This device showed a capacity density of 2,000 nF/mm2 and extended operating frequency.
At early follow-up this device showed good clinical results and allowed maintenance of reduction in complex, AO fractures.
Furthermore, the time-dependent response of this device showed a non-saturating behavior, and it was enhanced as reverse bias voltage increased.
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