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thin film encapsulation.
Figure 6 Lifetime measurement of OLED with thin film encapsulation.
Hybrid Al2O3/ZrO2/alucone thin film encapsulation structure can obviously improve barrier performance.
This work presents recent achievements concerning thin film encapsulation of metallic lithium negative electrode.
First and foremost, aluminium oxide (AlO x ) layers have emerged as a suitable thin film encapsulation [14, 15].
Thin film encapsulation (TFE) is considered as one of the most potent methods to ensure for protection from moisture and oxygen penetration in electronic devices [2,3].
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In summary, a hybrid ALD/MLD deposition technique has been used at a low temperature of 80°C in order to fabricate multiple stacked layers of Al2O3/alucone thin film encapsulations.
We investigate the heat transfer property of thin-film encapsulation (TFE) for organic light-emitting diodes (OLEDs).
Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer.
A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate.
Silicon dioxide (SiO2) has great potential to be used for thin-film encapsulation for flexible electronic devices, but it easily peels off with a large thickness to fail encapsulation.
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