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In this study, we report on thin encapsulation layers deposited by ALD at 85°C.
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The popcorn problem which was more severe with the smaller and thinner encapsulations of CSPs is also solved with modern hydrophobic materials and new non-paddle package designs.
thin film encapsulation.
Figure 6 Lifetime measurement of OLED with thin film encapsulation.
Hybrid Al2O3/ZrO2/alucone thin film encapsulation structure can obviously improve barrier performance.
This work presents recent achievements concerning thin film encapsulation of metallic lithium negative electrode.
First and foremost, aluminium oxide (AlO x ) layers have emerged as a suitable thin film encapsulation [14, 15].
Thin film encapsulation (TFE) is considered as one of the most potent methods to ensure for protection from moisture and oxygen penetration in electronic devices [2,3].
Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells.
Recently, this type of thin film encapsulation (TFE) has attracted great attention in order to overcome the air-sensitive issue [8-10].
This paper reported a low-temperature thin film encapsulation (TFE) process based on atomic layer deposition Al2O3 layer for top-emission organic light-emitting devices (TE-OLEDs).
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