Sentence examples for thickness was grown from inspiring English sources

CdS film with 18 to 28 nm thickness was grown in NTAs in about 90 s, more than two orders of magnitude faster than the normal method.

Thereafter, a GaAs buffer layer of 150 nm thickness was grown under RHEED observation in order to improve the crystal quality.

An oxide layer of approximately 1-μm thickness was grown on a p-type silicon substrate of resistivity 1 to 50 Ω cm through a wet oxidation process.

In this work, the shell of 50 nm in thickness was grown according to the relevant reports [20,40], and further optimization is potential to improve cell performance.

In the first GRR, a homogeneous layer of silver dendritic nano-forests (DNFs) with 10 μm in thickness was grown on Si wafer in 5 min in silver nitride (AgNO3) and buffer oxide etchant (BOE) solution.

After removing the SiN x hard mask and ex situ chemical cleaning (see also[17]), the sample was degassed in situ in the molecular beam epitaxy chamber at 700°C for 45 min. As a first growth step, a Si buffer layer of 45-nm thickness was grown at a substrate temperature ramped from 450°C up to 550°C with a growth rate of 0.6 Å/s.

A shell with a certain thickness is grown over each surface (Figs. 8, 9).

Polymerization was rapid, with PMMA brushes of nearly 240 nm thickness being grown in 24 h.

Nanotube films of up to 2 mm thickness were grown by catalytic chemical vapor deposition.

During this project, two different crystallographic textured LSMO thin films with a nanoscale thickness were grown using In2O3 epitaxial underlayering.

The epitaxial 3C-SiC thin films, ~100 nm in thickness, were grown by exposing the DC-heated Si substrate (1,323 K) to a CH3SiH3 (MMS) gas [5, 6].