The value of tm increases logarithmally with the thickness of crystals, Im increases linearly with the area of cross-section of crystals and IT increases linearly with the volume of crystals.
CLPEE removes the most important drawback of standard liquid phase electroepitaxy, i.e. limited thickness of crystals being due to superheating of the growing crystals by Joule heat generation.
With increasing V content, the V V -doped birnessites haV V -dopedcantly decreased crystallinity, i.e., the thickness of crystals in the c axis decreases from 9.8 nm to ∼0.7 nm, and the amount of vacancies slightly increases from 0.063 to 0.089.
For optical modeling in blue/green skin, the thickness of crystals and the spacing between well-aligned crystal layers were measured on images of unstained sections taken at ×25,000 magnification (Table 1; see Additional file 2: Table S3).
Where Δm is the mass gain at the electrode surface (in ng /cm2), fR is the fundamental resonance frequency of the quartz crystal, ρQ is the density of the crystal, d is the thickness of the quartz crystal (~330 nm ), A is the area of the electrodes and n is the overtone number used in the determination (n = 1, 3, 5...13).
Under ideal conditions, it is assumed that the deposited mass forms a monolayer, hence changing the effective thickness of the crystal as described with the deposited mass fully coupled to the crystal.
In height profile of PEG5000-b-PS10000/PEG5000 intermediate (neither matrix-dispersed nor random) single-co-crystals, the thickness of single crystals varied between 11.40 nm for homo-PEG5000 and 19.20 nm for total thickness of PS10000-covered PEG.
As can be seen, the PSSHG decreases with increasing the thickness of the crystal, and for the thickness higher than 10 nm, the PSSHG reduces to that for the undoped crystal (Fig. 4), demonstrating that a significant enhancement is achieved for the 0.8 nm thick crystal.
