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Online thickness monitoring is necessary to avoid abrupt breakage due to wall thinning.
A quartz crystal microbalance is fitted inside the evaporation chamber to provide real-time rate and thickness monitoring.
An operational electron density and slab thickness monitoring system, established to provide real-time characterisation of the local ionospheric dynamics, is outlined together with some exemplary results.
Choosing atomic density of Ag 5.8 × 1022 atoms/cm3, the calculated thicknesses are found as 10.4 and 31.0 nm, respectively, which is in good agreement to the thickness monitoring during the deposition of the films.
Using thickness monitoring, the thickness of TiO2 film was calculated to approximately 170 nm, whereas the thickness of deposited WO3 layers was calculated to be about 10, 20, 45, and 90 nm for 1, 2.5, 5.0, and 10 min, respectively.
The film thickness was determined using an optical thickness monitoring system, and the evaporation rate was deduced from the measurements of a quartz oscillator placed in the deposition chamber.
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The thickness of deposited films was approximately 8 nm and controlled by the film thickness monitor.
The growth rate and thickness were measured during growth using a crystal oscillator thickness monitor.
The thickness was measured using the thickness monitor (Maxtek, Inc. USA).
The Ge and Si growth rates were controlled using quartz thickness monitors.
According to the thickness monitor, once the thickness of the as-grown layers reached 500 nm, deposition was terminated.
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