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Nonuniform interfacial property becomes serious when IL thickness is reduced.
Its progressive increase when the films' thickness is reduced seems to inhibit the agglomeration of Si.
Usually, the web thickness is reduced for decreasing the self-weight of the tapered plate girder.
The oxide film thickness is reduced by implantation of nitrogen or noble metals.
This is because the cathode thickness is reduced and the electron transport to/from the current collector is facilitated.
The analytical results predict the enhancement of the quantum tunneling effect as the oxide thickness is reduced.
The Capacitance Voltage measurements show that the CdTe layer is fully depleted when the thickness is reduced below 1 μm.
Results showed a significant improvement of absorption rate when cavity thickness is reduced, especially for low gas velocities.
In theses systems, wave function would penetrate more to the adjacent quantum dots if the barrier height or the barrier thickness is reduced.
When the thickness is reduced considerably, the inward dimpling is followed by multiple numbers of nonsymmetrical lobes which are caused by the formation of stationary hinges.
As the film thickness is reduced, the exciton peaks become sharp, probably due to band structure transition from the indirect band gap to the direct one [1, 43].
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CEO of Professional Science Editing for Scientists @ prosciediting.com