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This is explained by considering well/barrier thickness fluctuations.
The interaction of the shock with the boundary layer on the airfoil produces displacement thickness fluctuations which convect downstream and generate sound by interaction with the trailing edge.
The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated.
One common strategy is the use of thickness fluctuations of an AlGaAs/GaAs/AlGaAs quantum well (QW) [13 15].
The intermediate (neither matrix-dispersed nor random) single-co-crystals were detectable through their thickness fluctuations in AFM height profiles.
For dots defined by thickness fluctuations, this problem is intrinsic to the fabrication and the use of two-dimensional islands of the epitaxial growth [13].
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Calculation shows that thickness fluctuation scattering is the main limitation in Al2O3/AlGaN/GaN double heterojunction HEMTs with thin Al2O3 layer thicknesses.
Hence, the MGS as a whole forms a new kind of closely spaced thickness fluctuation quantum dot ensemble.
The experimental and calculated results indicate that the thinner QWs are affected more by interface fluctuations, in particular, by the thickness fluctuation but not the composition fluctuation.
Third, for the same amount of thickness fluctuation, the E1-H1 energy of the thin QW changes more than that of the wide QW.
Our MGSs are therefore strain-free mesoscopic optical emitters that are composed out of a single classical GaAs dot surrounded by coupled thickness fluctuation dots.
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