Sentence examples for thick p from inspiring English sources

Figure 4b shows the output characteristics for a 30 nm thick p 6P film on similar transistor platforms.

Twentypercentt of women with hypertension and none of the healthy women had endometrium >5 mm thick (P <.017; odds ratio, 8.22; 95% confidence interval, 1.22-∞).

It should look like a large, thick 'P'.

Results: Cusp basal regions measured 0.69 to 0.86 mm in thickness, significantly thicker (P =.001) than the rest of the cusp, which measured 0.36 to 0.48 mm.

The first 441 pixels, 6.29×6.29 cm2 silicon module has been produced by ion implantation on a 50 μm thick p-type epitaxial layer.

At the end a 20 nm thick intrinsic GaAs layer followed by a 100 nm thick p-doped GaAs of 1 × 1019cm-3 was deposited.

On the contrary, the performance of GaAs NWs is seriously damaged by high surface recombination, especially in the cases of thick p-shells.

The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 µm thick p-doped absorber (InAs/GaSb SL) and an n-type contact layer (InAs/GaSb SL).

We have successfully fabricated 150 μm thick p-on-n and n-on-n prototypes of edgeless detectors having dead layers at the edge with a thickness below a micron.

Within this work, we would apply a numerical model to a p-i-n structure consisting of a stack of 150 nm thick n-GaN, 200 nm thick In0.12Ga0.88N/GaN and 100 nm thick p-GaN layers.

Several comparisons were made in order to determine the SL structure showing optimum radiometric performances: same InAs-rich SL structure with different active zone thicknesses (from 0.5 μm to 4 μm) and different active zone doping (n-type versus p-type), same 1 μm thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures).