Sentence examples for thick gate from inspiring English sources

The SONOS Flash memory can relieve the problem but still has a relatively thick gate dielectric thickness of about 7 nm.

The TDDB tests are carried out on 7 nm, 15 nm and 20 nm thick gate oxides.

The thick gate oxide layer is formed by field oxide process to endure the high voltage between the source and gate electrodes.

The downsizing of the metal oxide semiconductor field effect transistor (MOSFET) to dimensions <0.1 μm in the next years requires the adoption of <2 nm thick gate oxides, which unfortunately give rise to a significant direct tunneling current.

Because a thick gate dielectric is needed for enhanced retention performance, development of deep-submicrometer flash memory technology entails aggressive channel engineering in order to suppress short-channel effect.

Turn-on voltage is approximately 10 V. Field effect mobility, threshold voltage, and on off current ratio in 0.5-μm thick gate dielectric layer were 0.13 cm2/V s, −7 V, and 106 A/A.

The new proposed 2xVDD-tolerant I/O buffer has been designed and fabricated in a 0.13-μm CMOS process with only 1.2-V devices to serve a 2.5-V/1.2-V 2.5-V/1.2-V 2.5-V/1.2-V, without using the additional thick gate-oxide (2.5-V) devices.

A nanoFET has a 20 nm-thick silicon channel and a 5 nm-thick gate oxide layer of SiO2 for adsorption of negative ions.

Vapor HF etches the sacrificial layer underneath gate structures followed by thermal oxidation on the entire wafer to grow a 33-nm-thick gate oxide of the FET.

Such slow HfO2 etching rate is advantageous with respect to previous reports using SF6/Ar [8] from the process control viewpoint, as it allows to process a typical 2-nm-thick gate oxide in a practicable etching time, i.e. approximately 30 s.

"We are Catholics, go away," an elderly woman shouts as she slams shut a thick metal gate before scurrying back inside the headquarters of Poland's most popular radio station.