Longitudinal dispersivity and thermal distribution factor are highly identifiable, however spatially distributed parameters are only identifiable near the injection point.
These correlations indicate an approximately thermal distribution of Hawking radiation.
The term hot electron is often applied to an initial, non-thermal distribution that subsequently relaxes to a thermal distribution and this relaxation dynamics is termed hot electron dynamics even though the initial distribution cannot be described by a temperature.
The laser power absorption and dissipated thermal distribution are measured.
In this paper, thermal distribution of single chip embedded system on silicon is discussed.
The thermal distribution calculations require evaluation of switching activity factor of circuit blocks.
Specific examination is made on thermal distribution, interface shape and velocity field.
Our methodology considers both thermal distribution and routing length constraints during multichip module placement.
The thermal distribution measured by IR thermovision is uniform across the membrane surface.
To predict the internal thermal distribution, we used a commercial simulation program, CG-SIM.
The insets show the different regimes experienced by the experiment, from a completely Gaussian thermal distribution, through the bimodal distribution containing a thermal background to the sharp edged BEC.
