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Also, the thickness of the upper cladding layer is discussed through calculating the effective index of the multilayer planar waveguide structure has been obtained by setting the optical loss due to the metallic absorption to an acceptable value (<0.1 dB/cm).
A stripe width of 2 μm is clearly shown and the etching was stopped right above the upper cladding layer as described previously.
A small part of the wafer is etched by chemical etching to thin the upper cladding layer with H3PO4-H2O2-H2O (1:1:4) after the laser epitaxial structure was completed [17, 18].
Then, a 3-μm low-doped (Si, 2.2 × 1016 cm−3) InP layer, followed by a 0.15-μm gradually doped (Si, 1 × 1017 to 3 × 1017 cm−3) InP layer, and a 0.6-μm highly doped InP (Si, 5 × 1018 cm−3) cladding layer were accomplished in sequence as the upper cladding by metal organic vapor phase epitaxy (MOVPE) regrowth.
Then, a 3-μm-thick low-doped (Si, 2.5 × 1016 cm−3) InP layer followed by a 0.2-μm gradually doped (changing from 1 × 1017 cm−3 to 3 × 1017 cm−3) InP layer and a 0.5-μm InP (5 × 1018 cm−3) contact layer were accomplished in sequence as the upper cladding by metal organic vapor phase epitaxy (MOVPE).
The blue shift of the center wavelength compared to the abovementioned test sample (as shown in Fig. 2a) is due to the high-temperature growth (650 °C) during the growth step of the upper cladding with a growth time longer than 2 h.
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The upper clad thickness has been chosen such that to avoid any attenuation due to lossy behavior of the metal electrode.
For waveguides with the polymethylmethacrylate as upper cladding, the propagation loss of the channel waveguides was measured to be 0.25 dB/cm at the monitoring light of 1550 nm.
The proposed structure works well with low crosstalk level of −28 dB and low switching power relatively to the structural upper cladding thickness.
Due to the influence of upper cladding layer heat, the eutectic structure in the interlayer bonding zone is obviously coarsening in organization coarsening zone.
The sensing arm which is covered by the DNA as upper cladding has 0.45 x 10−3 decreasing power in comparison to the reference arm.
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