Sentence examples for the suppression of interface from inspiring English sources
ZrO2 based texturing has been used along with SiC-based front surface passivation for the suppression of interface recombination and improvement of open-circuit voltage (VOC).
In this effort, 10 μm thick rear contact (RC) silicon germanium (SiGe) based solar cell device has been discussed with SiC (20 nm -based fronm -basede passivation fronthe surfacesion of interface recombination as well as impassivationforhortheircuit current densuppressionand ofen-cinterfaceltage (VOC).
Table 8 Effect of the suppression of interface names MAP Mode Min Median Max Avg.
The slowdown of crystallization under shear can be ascribed to the suppression of the interface and fluctuation assisted nucleation under shear, which cannot be compensated by the acceleration effect due to molecular stretching/orientation under shear.
Electrochemical impedance spectroscopy, XRD and SEM of cycled electrodes tests results provide evidence that the improved cycling performance is mainly attributed to stable surface oxygen, the suppression of the interface reaction between the cathode and electrolyte and the improvement in the structural stability of material.
EIS and FTIR data illustrate that the improvement of electrochemical performance can be attributed to the suppression of solid electrolyte interface (SEI) growth by AlF3 coating layer.
Two types of interface mechanisms are involved, one is realized by the mismatch of the antipolar modes between two parent bulk materials and the other is the suppression of antiferrodistortive mode at interface.
The benefit role of ZnSe was ascribed to its intermediate lattice parameter to CdSe and ZnS, which leads to the suppression of defects at CdSe/ZnS interfaces and facilitating the growth of ZnS with higher quality.
Thus, the superheating of the embedded Pb particles is mainly attributed to the low-energy epitaxial Pb/Al interfaces, i.e., γ SM < γ LM, leading to a suppression of interface nucleation of the liquid phase as confirmed by molecular dynamics simulations [24].
From the AES analyses, it was suggested that the sulfide-forming elements in the solder diffused into the Cu UBM and reduced the segregation of S atoms to the Cu/Cu3Sn interface by scavenging S, which led to the suppression of Kirkendall void nucleation at the Cu/Cu3Sn interface and the drop reliability improvement.
Through a further analysis, the fact that Al-TiO2 can effectively augment the charge collection and abate charge recombination efficiency by the suppression of oxygen vacancy defects at Al-TiO2/CH3NH3PbI3-xClx Al-TiO2/CH3NH3PbI3-xClx Al-TiO2/CH3NH3PbI3-xClxfinterfaces unveiled.
