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There is no limitation to the sample thickness – the model is valid for thin as well as for thick samples.
for the sample thickness used in this study up to 180 nm.
where log(Io/I is the optical density, d is the sample thickness and λ is the wavelength.
The sample thickness is matched with the electron mean-free-path at the Fermi level (70 nm)25.
For the synchrotron measurement, the sample thickness was 2 μm, and the cell walls were 100 nm Si3N4.
The sample thickness was varied from 0.1 to 8 mm.
Electric capacitance was measured to obtain temperature dependence of the sample thickness.
Unfortunately, the sample thickness obtainable today limits their use to low and moderate power application.
Moreover, the sample thickness has no significant influence on the reflection shielding effectiveness.
The matching frequency could be adjusted by changing the layer number rather the sample thickness.
The independent variables were the sample thickness and the amount of chemically combined water in plaster.
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