Sentence examples for the retraction process from inspiring English sources

Cross-sections made from plan-view transmission electron microscopy samples revealed that this was related to ridge formation during the retraction process.

If we assume the mass of the flake to be small, it is possible to depict the retraction process as a series of quasi-static steps.

This result infers that the retraction process overall appears to seldom find δφ as the next lower potential step to advance to.

By the optical microscope observation, it was confirmed that the disintegrated drop maintains the axisymmetrical ellipsoidal shape during the retraction process and was parallel to the observation plane.

Hence, while the motive force is strong enough to surmount these valleys in the process of moving the flakes apart, the retraction process may engender the flake ceasing to move at the first local trough encountered in the return trip.

Under the assumption that the mass of the flake is small, the retraction process can be depicted as a series of quasi-static steps that seek the lowest potential.

While the equilibrium behavior of the networks can be well described by a mean field theory for rubber elasticity, the long time relaxational dynamics can be rationalized in terms of the Pearson-Helfand picture for the arm retraction process.

In addition, Figure 5 illustrates the effect of water on indentation force during the tool retraction process by comparing cases 1 and 2. For both wet and dry indentations, the indentation force decreases quickly at the beginning and reaches the equilibrium state at the retraction distance of about 0.7 nm.

As these bacteria can adhere to fibronectin-coated substrates [ 19], thus slowing/halting the cytoneme retraction process, they were a useful model for investigating the physical properties of these transient structures.

The combination of stacking and fluttering motion during the extraction and retraction process generates multiple power peaks in a single input.

Figure 5 Atomic configurations of Cu substrate during the second part of retraction process at different depth: a η = −1.56 nm, b η = −3.5 nm.