The phrase 'the proposed analytics' is correct and usable in written English.
You can use it when referring to a set of analytics or data analysis which has been suggested by someone. For example: "The proposed analytics indicate that the project is likely to be successful under the current conditions."
The simulation data from the friction model is approximately in agreement with the experimental data, better than the general model, implying that the proposed analytics model provides more accurate simulation of the friction coefficients.
The proposed solution provides an end to end solution for conducting large scale analysis of technical support data using the open source Hadoop platform, components of the Hadoop Extended Ecosystem such as HBase and Hive and clustering algorithms from the extended Mahout library. Figure 1 illustrates the architecture of the proposed analytics solution.
Then, the Monte Carlo simulation are performed to verify the proposed analytic method.
The results show the agreement of the proposed analytic function with the experimental results.
Experiments were conducted to verify the proposed analytic model and technique.
In order to validate the proposed analytic model, we write our own event-driven simulation program in MATLAB.
In Section 3, the proposed analytic framework will be presented, and the corresponding computational algorithm will be derived.
Based on the solutions to the proposed analytic model, closed-form expressions of channel throughput, transmission delay, and packet reception rates are derived.
The hinge positions evaluated with the proposed analytic model are in a perfect agreement with the experimental outcome, as shown in Fig. 11.
Parameters of the model are derived based on the proposed analytic solution that describes dissipated heat by a radiator to ambient air.
Moreover, the numerical simulation results show that, with the guidance of the proposed analytic model, Ron of the improved Hk-MOSFET can be optimized to be about 30%50%% lower than that of the conventional Hk-MOSFET with VB = 300 1000 V.
