Dependence of width of the pattern on parameters of the process has been discussed.
Light scattering due to the dispersed, non-index-matched photoresist domains leads to an intrinsic grayscale profile of the pattern width through the depth of the exposure field, a feature bringing significant and previously unexplored consequences for strain-induced folding dynamics.
Figure 3 shows examples of the fabricated patterns where the widths of the target patterns were 5, 10, 20, 50 and 100 μm, respectively.
The electrode design of pattern A (the width of grid was 150 μm and the width of gap was 500 μm) was the best.
By adjusting the distance of the stripe patterns with a width of 20 μm, samples with an OAR of 100, 80, 60, 40, and 20% were produced.
For reconstitution of Min protein oscillations along the length axis of a compartment, the mask patterns had a width of 10 µm.
Line width variation of the pattern of an as-deposited film was improved to be well below the electronics design rule, 5%.
Prediction performance was optimized with variations in three training factors, the number of pattern units, width of radial basis function, and initial weight distribution between the pattern and output layers.
Set the preferences, like the width of the line, and the pattern of the line.
Moreover, the OAR was controlled by adjusting the distance of the stripe pattern to a width of 20 μm.
