Sentence examples for the lowest reflection from inspiring English sources

The reflection loss (RL) curves show that the lowest reflection loss of Fe/Epoxy composite (−20.5 GHz) was obtained corresponding to the frequency of 8.5 GHz when the thickness of the absorber was 3 mm.

As a result, structure E yields a moderate J ph of 36.62 mA/cm2 that is even lower than structure D, despite it has the lowest reflection [see Fig. 4b].

For the reference device, bare-Si with the highest reflection was used and for the other, MWCNT etch-masked Si with HMDS dispersion with the lowest reflection was used.

Particularly, the Si inverted nanocone arrays with 500-nm lattice shows the lowest reflection around 542 nm wavelength, and the 1,000-nm 1,000-nmone demonstrates 4.7% reflattice at appronemately 1,020 nm wavelength, i.e., the Si invertedemonstratesrrays can provide enhanced light trapping ability when the incident light wavelength is close to the sizes of the Si inverted nanocone.

The reflective result shows that the MOS-structure solar cell with a 50-nm ITO/10-nm SiO2 layer exhibited good antireflective (AR) performance and that the low reflection band of the reflective spectrum matched the high energy band of the solar energy spectrum.

2. The array can be regarded as air-filled gradient refractive index medium, which is also in favor of the low reflection.

Calculations show if one prefers to place the low reflection area in the middle of the discussed frequency range (120 130 GHz), the thickness of 1.6 mm is near optimum and its −20 dB bandwidth angle is more than 30°.

The low reflection of AZO on SiO2 substrate in 1000 1500 nm results from low n and k in Fig. 1.

This is due to the low reflection between the wavelength 350 to 500 nm, in respect to the solar cell coated with a ZnO nanotube.

Relying on previous studies, the low reflection of a-Si H/SiNWs is ma-Si H/SiNWs by the graded refractise index of the SiNW core [28].

For the other ARCs, the Si3N4/MgF2 DLARC shows the low reflection loss ~10% for the long wavelengths 700 nm and high reflection loss > 20% for shorter wavelengths 400 nm, lower than that of individual Si3N4 or MgF2 SLARC [27].