Sentence examples for the large mismatch from inspiring English sources

The large mismatch of thermal expansion between stiff inorganic molds and polymeric films is also problematic.

However, the large mismatch between CdTeSe and ZnS lattice parameters enables the strain at the interface between the core and the shell.

The large mismatch in the lattice parameters of InN and Si shows that there is generally a high density of interfacial states between two materials.

The large mismatch of thermal expansion coefficient between La2Zr2O7 coating and composite substrate is a key limitation to this use of TBCs.

The large mismatch in the coefficients of thermal expansion is used to grow an interlaminar crack at the interface of the 0° and 90° laminae.

However, the large mismatch of lattice constants and thermal expansion coefficients between ZnO and Si will deteriorate the optical property of the ZnO films on Si substrates [8, 9].

We suggest that the elastically soft sapphire surface layer can accommodate the large mismatches at the GaN/sapphire interface, which necessarily produces dislocation-free GaN.

Because of the large mismatches of the lattice constants (15.4%) and thermal expansion coefficients (60%) between ZnO and Si [11] and the oxidation of Si surface, direct growth of ZnO on Si substrates resulted in amorphous or polycrystalline films [12].

GaN-based MSM PDs also can detect the UV region, but a significant number of threading dislocations exit in GaN epilayers due to the large mismatches in lattice constant and thermal expansion coefficient between GaN and substrate, like sapphire and Si.

For strut thickness, the results show the largest mismatch (60% from the design) occurring for horizontal members, reduces to 3.1% upon application of the compensation.

It is inferred that the 20 times larger Bi nanowire density on the Bi/SiO2/Si stack results from the larger mismatch of thermal expansion coefficients between the substrate and the Bi film for the Bi/SiO2/Si stack than for the Bi/Si stack (note the difference in the thermal expansion coefficients of Si and SiO2).