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The lateral photocurrent is directed by a vertical (parallel to the growth direction) gate voltage.
The grown crystals were cut along the growth direction and its growth properties were studied.
Figure 6b shows the growth rate variation along the growth direction of μG and 1G samples.
The growth direction of silver nuclei is controlled by their degree of coating by PVP.
Surprisingly, the residual stresses are practically uni-axial, with high stresses in the growth direction.
The electric field is considered to be applied along the growth direction.
Likewise, the growth direction of R4 varies, but they have little or no statolith sedimentation.
Their composition gradient along the growth direction was confirmed by Rutherford backscattering analysis to be uniform.
The grown crystals were cut along the growth direction and polished with alumina powder to obtain a mirrored surface.
The composition profile of the crystals was measured along the growth direction, as shown in Figure 6a.
The indium composition of the μG sample at the seed interface was 0.028 and gradually decreased along the growth direction.
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