Sentence examples for the enhanced defect from inspiring English sources

The enhanced defect reactivity indicates that grain boundaries may be manipulated by point defects.

The critical ion fluences corresponding to the maximum in ID/IG ratios increase with increasing irradiation temperature because of the enhanced defect annealing.

The increase in intensity of the Si-O-Si bonding peaks at approximately 800, 1,080, and 1,113 cm-1 on the oxidized Si-ncs is probably due to oxygen capture from the atmosphere by the enhanced defect centers.

Thus, the intensity of undoped and doped PL spectra corroborates the enhanced defect levels in the specimens, with a corresponding increase in the concentration of Al. Figure 12 PL spectra of the as-synthesized ZnO Al nanowires on a silicon substrate showing intensity versus energy.

In the same way, the enhanced peak near 1530 nm in the PL spectra is measured on the Si-NC structures with sulphuric impurity at 20 K, in which it is interested that the annealing time plays an important role for producing the enhanced defect emission, as shown in Fig. 8a.

It is well known that an introduction of a small amount of nitrogen into the SiO2 gate oxide leads to an enhanced defect density in the case of N pileup at the Si/SiO2 interface [23].

The double mutants did not show any enhanced defect in axon regeneration compared to the single ced-7(n2094) mutant (Fig. 5e and Supplementary Table 1), suggesting that TTR-11 and CED-7 function in the same pathway.

The double mutants did not show any enhanced defect in axon regeneration compared to the single ttr-11 km64 ttr-11 km64n3246) mutants (Fig. 3b and Supplementary Table 1), suggesting that TTR-11 and CED-10 alsorfunction in the same pathway.

Its increase with increasing volume fraction of grain boundaries is attributed to the enhanced diffusional flux of weakly bonded surface adatoms into this area and enhanced defect generation due to the higher sensitivity of grain boundary atoms to displacement by incident particles.

The enhanced localized defect states below the conduction band in the irradiated films results in the band gap shrinkage due to band bending mechanism.

It was found that by increasing the bias voltage during deposition to −150 V the normally arising columnar structure is reduced due to enhanced defect and nucleation site formation.