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From 35 to 40 min, the etching depths of both the unprocessed and 1.5-μN-load pre-processed areas were larger than those of the areas processed at higher load.
In contrast, the areas processed at high loads of 10 and 40 μN were not etched.
These thick oxide layers, which were mechanochemically formed on the areas processed at higher load, prevented the KOH solution etching and thereby decreased the etching rate.
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In this condition, the height of the processed area was as much as 3 nm higher than that of the area processed at 10-μN load, and surface damages such as dislocations were increased in number.
The etching depth of the area processed at 1.5 μN progressively increased to 210 nm, while that of the unprocessed area increased to 140 nm.
Furthermore, the energy dispersive X-ray analysis was performed to the area processed by focused ion beam, and the bismuth component of the nanowire was successfully detected.
Figure 4a shows the surface profiles of areas processed under nine different applied loads with 10 nm amplitude vibration.
His research interests are in the area process mining, process analytics, optimization, and sensor data analytics.
The decrease in the current of the area mechanically processed with vibration was -2.5 nA, larger than that of the areas electrically processed with the same vibration amplitude.
The square groove of the 6 × 6 μm2 area processed at 1.5-μN load was slightly etched.
The current of the areas mechanically processed with vibration did not significantly vary with applied load.
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