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In this case, the optical losses in the absorber layer can be significant.

Therefore, for this study, we have chosen the material combination P3HT/CdS as a model system to investigate if the absorber layer nanomorphology can be tuned by the molecular design of the precursors.

Furthermore, the electrical and optical performances of the absorber layer are improved significantly with the increasing substrate temperature.

The absorber layer in this work is deposited using the pulsed laser deposition technique (PLD).

In the absorber layer, no fluctuations that could clearly be attributed to electronic inhomogeneities were observed.

Even when the Cu2O signal diminishes, as the absorber layer gets thinner, its presence is clearly observed in the logarithmic representation.

Furthermore, vertical variation of the UV absorbers may be revealed by the continuously synchronized observation.

Using the same device structure, the CIGS absorber layer can be replaced by indium-free absorbers, such as Cu2ZnSn(S,Se)4 (CZTSSe) with kesterite structure.

In addition, the composition and the average grain size are appropriate for the absorber layer fabrication.

This provides a reasonable test of the idea that a multi-orifice absorber may be regarded as a set of single orifice absorbers operating in parallel.

The three energy-conversion layers below the antireflection layer are the top junction layer, the absorber layer, which constitutes the core of the device, and the back junction layer.