Sentence examples for terminal breakdown from inspiring English sources

"Like so many people in our fifties — in my experience almost everybody — I have a parent in an advanced stage of terminal breakdown," he wrote in his New York magazine article.

A cardinal point is Orozco's way of relating to post-minimalism, notably the achievements of Bruce Nauman and Eva Hesse, as a cogent, fertile tradition, rather than — as it has often seemed for the past forty years — a terminal breakdown of art's formal integrity, relevance to life as it is lived, and civilized appeal.

In Adam Thorpe's novel, one kind of narrative skew (the protagonist recreates his childhood voice and vision to tell of the year he turned 7) becomes a second kind (nearing 70, he writes from the mental institution where he is confined after a terminal breakdown).

A C-terminal breakdown product of collagen XVIII, known as endostatin, has been extensively investigated for its role in suppression of neoplastic tumours [ 7].

In this paper, the reliability issues of the lateral insulator gate bipolar transistor based on SOI substrate (SOI-LIGBT), including the anode punch-through, the terminal early breakdown, the hot-carrier degradation and the latch-up failure, have been experimentally investigated and improved.

To measure PCD following prolonged P2X7 stimulation, we therefore compared the rate of terminal membrane breakdown (indicated by propidium iodide uptake) following BzATP treatment of NZW lymphocytes, NZB lymphocytes and (NZB × NZW F1 lymphocytes (Fig. 4).

30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40 38) V.

Fig. 11 a Gate leakage current and b three-terminal off-state breakdown characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT.

The three-terminal off-state breakdown characteristics of AlN-MISHEMTs with L G = 2.5 μm, L GS = 1 μm, and various L GD were shown in Figure 8.

Figure 11b displays the three-terminal off-state breakdown characteristics of the conventional HEMT and Ga2O3 MOS-HEMT measured at a value of V GS of –6 V.

The intensity of LPx was estimated by measuring the amount of malondialdehyde, a terminal product of lipid breakdown due to peroxidation damage, using the method of Buege and Aust [ 27].