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Experiments using these SONGs nanostructure as the template substrate to fabricate nanostructures of various interesting materials are underway.

Graded Si1−xGex virtual substrates (VS) with 0.1 ≤ x ≤ 0.3 were used as template substrates upon which tensile Si layers were grown.

Thin films of GaN were grown on template substrates of 4-μm-thick GaN layers on sapphire substrates by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE) in a new-design reactor with the shape T. Wide range of growth temperature from 520 to 1100 °C was explored.

ZnO Mn films doped with indium (In) and nitrogen (N) have been grown on sapphire and ZnO template substrates, respectively by the metal-organic chemical vapor deposition method.

To obtain tensile strained silicon layer, germanium is an ideal template substrate for the epitaxial growth, as it has the same crystal structure as silicon but with a larger crystal lattice.

Standard DNA polymerase reactions of 8 μL were performed in 50 mM Tris-HCl (pH 7.5) buffer containing 50 mM NaCl, 5 mM dithiothreitol, 100 μg mL 1 bovine serum albumin (BSA) (w/v), and 10% glycerol (v/v) with 100 nM primer-template substrate at 37 °C.

A single nanoparticle array template was fabricated on these substrates to initiate the vapor-liquid-solid (VLS) growth of GaAs core.

In the case of Ni RABiTs, the degree of disorientation is directly linked to that of the template substrate.

Under such a hypothesis, the HERV sequences would serve as microhomology substrates to facilitate a template switch during DNA replication.

Czochralski monocrystalline silicon wafers were used as initial substrates to form PS templates of different thicknesses and porosities.

Therefore, an efficient way to synthesize 2D layer-nanostructured MoS2 is to use graphene or carbon nanotubes (CNTs) as a template substrate [10, 16, 18, 23].