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The annealing temperature was varied from 100 to 500 °C.
The evaporation temperature was varied from 95 to 120 °C.
The room air temperature was varied from 25, 26, 27 and 28 °C and in each temperature, was varied air speed 3 levels (low, medium and high).
The simulated dimensionless outlet temperature was varied from 0.20 to 0.73.
The substrate temperature was varied from 20 °C up to 700 °C.
In this work, the temperature was varied from 600 °C to 1100 °C.
The column temperature was varied from 40 °C to 300 °C at a temperature ramp rate of 5 °C/min to 20 °C/min.
The substrate temperature was varied in the range from 300 to 500°C.
In forward bias the temperature was varied whilst in reverse bias the applied voltage was varied.
The substrate temperature was varied in the range 230 410 °C.
In addition, the upstream temperature was varied from 295 to 700 K.
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