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With temperature varying between years the same sowing date could in one year give 100% sterility and less than 100% in another year.
The same authors propose a correlation for the thermal conductivity but only valid for a temperature varying between 0°C and 100°C.
The firing was carried out in an electric furnace, with the temperature varying between 1160 and 1260 °C, according to the maximum densification of each composition.
Reaction time and temperature were optimized using a full factorial design of experiment (DoE) from 3 to 25 h with temperature varying between 45 and 105 °C.
Gas composition was found to take values between 0.009 0.058 for O2 and 0.154 0.200 for CO2, when the packages with a single perforation were exposed to storage temperature varying between 285 and 293 K during 14 days of storage.
The catalytic oxidation of cyclohexane is performed in a flow-type system operating under atmospheric pressure and at the reaction temperature varying between 300 and 400 °C, cyclohexane flow rate 3 ml/h, liquid hourly space velocity (LHSV = 1.5 h−1) and with air flow rate of 50 ml/min.
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This occurred at temperatures varying between -123 and -89°C (Figure 4), suggesting that the type 1 inclusions consist dominantly of a CH4-rich fluid.
In Fig. 8a, we show the flat-band voltage transients recorded at temperatures varying between 195 and 275 K for the sample grown at 200 °C.
The results obtained reveal important hot spot effects and differences of surface brightness temperatures varying between −5 and 7 K between nadir and off-nadir measurements, according to azimuth view angles.
By varying the PS/PPE composition, homogeneous amorphous phases with different glass transition temperatures, varying between 100 (Tg,PS) and 215°C (Tg,PPE), and melt-viscosities were obtained, without altering the interfacial tension of the blend system.
It was shown that at atmospheric pressure and at temperatures varying between 135 and 350 °C deposition was selectively occurring on the patterned Cu films only and not on the silicon oxide, which covered the Si substrate.
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