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The low temperature grown HfO2 films were smooth with a very low surface roughness (< 0.4 nm).
Low temperature grown metallic α-phase and semiconducting β-phase FeSi(Al) are introduced as auxiliary electrode and hydrogen evolution performance is compared with commercially available platinum electrode.
However, many studies concentrated on lower temperature grown small-size Ge QDs [6, 13], which have stronger quantum confinement and lower Si-Ge interdiffusion.
Different temperature grown Si-caps showed different growth behavior with morphology of the Si-cap grown at 850 °C completely different than that of the Si cap grown at 750 °C.
The pulses of THz are generated in this system by the excitation of a low temperature grown GaAs wafer with a gold deposited bow-tie antenna with a 780 nm near infrared laser with a pulse width ~ 100 fs.
Square nanopits, with a depth of about 8 nm and boundaries along 〈110〉, were formed in the low temperature grown Si capping layer by thermal annealing at 640°C.
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Wind, rain, and temperature grew worse.
The reaction is exothermic; the solution temperature grew from room temperature to 70°C.
It is found that the WCA decreases as the annealing temperature grows from 200°C to 400°C and increases as the temperature grows above 400°C.
The electron temperature grows and diminishes corresponding to each discharge event.
The temperature grows with the drawing rate (Koenen 1994; Toda et al. 2002).
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