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The average transmittance gradually decreased as the annealing temperature further increased to 600 °C.
As the temperature further increased to 700 and 800 °C, it was found that Zn2Ti3O8 and ZnTiO3 phases coexisted.
As the annealing temperature further increased to 750 °C, the average transmittance increased again, which can be ascribed to the disappear of Ag mid-layer.
Moreover, when high electrical current was passed through the SWCNT sheet, the local temperature further increased which invoked additional thermal expansion.
For 10 % Ir/SiO2-873, the signal for H2 at high temperature further increased with a clear decrease in H2O concentration.
As shown in Figure 5C, the electrochemical response increases with increasing temperature from 25°C to 35°C and then decreases as the temperature further increased.
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As the temperature further increases, a second transition point (the boiling point) is reached where the long-range order becomes unstable relative to the largely independent motions of the particles in the much larger volume occupied by a vapour or gas.
After the temperature further increasing above 200 K, the emission peak redshifts again.
With calcination temperature further increasing to 700 °C, the state of Zn2SnO4 transferred from amorphous to crystalline.
When the annealing temperature further increases to 1,000°C, a new PL band peaked at approximately 1.6 eV arises.
The defect rate increases slightly as temperature increases from 25 °C to 400 °C and then increases sharply as the temperature further increases to 800 °C.
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