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At the annealing temperature, Au droplets first react with the ZnSe thin film to form AuZnδ alloy droplets.
At high working temperature, Au catalyst and Ag dopant are combined as liquid state at the top-end of nanowire because nanowire is grown by VLS method.
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At relatively low temperature, Au-capped GaAs nanopillar arrays could be formed by site-selective etching in the surrounding exposed GaAs surface.
At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs.
At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically hindered, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs.
Upon heating to higher temperatures, Au agglomerates to form large particles with a well-defined hexagonal shape.
An AFM study of the dynamic evolution of a growing interface was carried out for room-temperature Au sputtered onto a SiO2 substrate.
At low temperatures, Au, Au3Cu, AuCu, AuCu3, and Cu exist and order easily in Au-Cu alloys system.
With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases.
The Au-Au interaction is modeled by a many-body potential which accurately reproduces the melting temperature of Au [18 20].
The minimum required energy Em is that required to melt the Au-NP and heat the Si tip to the melting temperature of Au.
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