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In conditions of temperature abuse the system behaved like microperforated packaging, resulting in a marked deviation from the target atmosphere.
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The target storage atmosphere was obtained in a two-step procedure.
The sensitivity (S) was calculated as ΔI/I 0, where ΔI is the change in current that is induced by exposure of the device to the target gas atmosphere and I 0 is the initial current.
Ge QDs embedded in silica have been obtained by magnetronco-sputtering of SiO2 and Ge targets (Ar atmosphere,nominal deposition temperature 400°C), upon fused silicasubstrates.
Y2O3 and AlN films were prepared by RF magnetron sputtering of Y2O3 ceramic target in Ar atmosphere and pure Al metal target in Ar + N2 atmosphere, respectively.
W S N films were deposited by reactive magnetron sputtering from WS2 target in Ar/N2 atmosphere.
We examined reactive pulsed laser ablation of silicon target in hydrogen atmosphere to form hydrogenated silicon nanoparticles.
Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193 nm) ablation of a graphite target in nitrogen atmosphere.
Nitrogen-doped single wall carbon nanohorns (N-SWCNHs) were prepared by CO2 laser ablation of a graphite target under nitrogen atmosphere.
CNx thin coatings have been deposited by dc magnetron sputtering using a graphite target in nitrogen atmosphere under different experimental conditions.
Amorphous boron carbon nitride (BCN) thin films were deposited on Si (100) and quartz substrates by laser ablation of a boron carbide (B4C) target in nitrogen atmosphere.
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