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Figure 1 shows the structure of InGaN/Si tandem cells used for the theoretical simulation.
The highest efficiency cells to date are tandem cells made using single crystal III-V materials.
Jsc is a dominant factor in determining the performance of InGaN/Si tandem cells.
InN/Si tandem cells have been proposed for high-efficiency solar cells [6].
Figure 1 The structure of InGaN/Si tandem cells used for theoretical simulation.
We present a numerical method to obtain suitable intermediate reflections achieving optimal current-matched tandem cells.
Although numerical simulations of InGaN/InGaN two-junction solar cells, InGaN/Si tandem cells, and InGaN multiple-junction solar cells have been conducted [15 17], the current-matching effect of InGaN/Si tandem cells has not been well studied.
The J sc of InGaN/Si tandem cells is the smaller of the InGaN subcell-limited photocurrents.
In the 'Results and discussion' section, simulation results of the performance of InGaN/Si tandem cells are discussed.
Among these approaches, we could cite tandem cells, concentrator cell, carrier multiplication, down conversion, hot carriers, etc.
The performance of InGaN/Si tandem cells can be optimized through the optimization of the device structures.
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