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The top layer of a tandem cell is a perovskite that has been tweaked to absorb strongly at the blue end of the spectrum.
To produce a high-efficiency InGaN/Si tandem cell, the current-matching effect and the operation mechanisms of InGaN/Si tandem cell must be well understood.
The Jsc is more easily InGaN subcell-limited in the low-indium InGaN/Si tandem cell.
The InGaN/Si tandem cell must consider the current-matching effect.
Power densities versus V are also inserted for the designed tandem cell and reference cell.
This being the optimum energy for an upper tandem cell element.
This is the best efficiency reported for this type of hybrid tandem cell so far.
This shows that the low-indium InGaN/Si tandem cell is not suitable for solar cell applications.
In a tandem cell, solar cells of different band gaps are stacked on top of one another.
The Voc of InGaN/Si tandem cell is the sum of the Vocs of InGaN and Si subcells [3, 18].
The conceptual design of a complete device is shown in Figure 1. Figure 1 Si nanostructure/Silicon tandem cell.
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