Sentence examples for tailored gap from inspiring English sources

Since the effectiveness of the isolation mechanism is controlled by the tailored gap and pores dimensions, a few problems have aroused.

We theoretically investigated the possibilities of establishing ferromagnetism and tailoring band gap of narrow-gap PbS with early 3d transition-metals (V, Cr, and Mn) doping and strain engineering.

The effectiveness of a systems approach for novel biochemical pathway discovery in mammals is demonstrated and steps required to tailor future gap filling algorithms to mammalian metabolic networks are proposed.

Prior to the 2013 mass treatment, education messages tailored to the knowledge gap in schistosomiasis prevention were provided to all children in both groups of schools with high levels of knowledge registered in the schools.

These national SDH mapping reports were the basis to build the SDH-Net strategic research capacity building plan and subsequent development of innovative SDH research capacity building tools, tailored to fill the gap between the unmet national research priorities and research system needs.

In the United States, many private health insurers offer "Medigap" coverage that is tailored to fill in gaps in Medicare coverage.

Even a small percentage of N causes a large redshift of the band gap; therefore, incorporation of N into the III-V lattice brings more flexibility to tailor the band gap of the material[5].

Recent studies have suggested that chemical functionalization is a promising avenue to tailor the band gap of silicene, which plays an important role on widening its application.

The efficiency of Dye-Sensitized Solar Cells (DSSC) can be significantly enhanced by optimizing the concentration of surface trap states and by tailoring the band gap energy in the semiconductor oxides used as photoanodes.

T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH LH splitting energies with InSb transition layers between InAs/AlSb interfaces.

Only 1% of N causes approximately 150-meV band shrinkage, therefore gives a great flexibility to tailor the band gap of the host material.