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We performed an experiment to investigate the effect of channel switching time on throughput for our proposed scheme when there is a jammer.
The effect of operating conditions, as the SMBR configuration (columns arrangement) and switching time, on the performance parameters was studied at isothermal operation.
The effect of operating parameters, as the feed composition, SMBR configuration and switching time on the SMBR performance parameters at the optimal operating points and/or reactive/separation regions was studied.
Non-isothermal operation was studied, with low temperature feed, and the influence of the switching time on the mean outlet concentration of NH3 and NOx was investigated, as well as the response of these devices to perturbations in the pollutant feed concentration.
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Typically electric field switching times on the order of 10 ns are achieved in experiments in which pulsed electric field ionisation is employed for the detection of Rydberg atoms or molecules.
Although it is theoretically possible to find the optimal stress levels and stress switching times on each step of a SSALT with finite multiple steps, the "simple SSALT" that has only two steps was generally used in practice [76].
Fast switching times on the low-energy side, with maximum settling times of 30 ms, are achieved by holding the injector magnet field constant while changing the energy of the different isotopes by changing the pre-acceleration voltage after the ion source.
We then measured the mean switching times of each model, that is, the average time the switch spends on one of the two states (either P1 ×N < P2 ×N or P1 ×N > P2 ×N ).
(b) Free-layer magnetization switching trajectory for C = 0.1 pF. Figure 7 STO free-layer magnetization switching time dependence on capacitance when (a) Idc = 7 mA and (b) Idc = 30 mA. t S − 1 ∝ a J c − a crit c (11).
We focus on performance parameters whose variations with direct optical modulation have not been reported previously for a power semiconductor such as switching times and on-state resistance.
The physical phenomena for STO free-layer switching time actually depends on three main factors: damping constant, in-plane spin torque component, and critical spin torque which intrigues the switching.
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