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The transformation from the interfacial switching mode to the filamentary switching mode can be triggered by a second forming step as demonstrated in Fig. 5a.
The stochastic switching in this research was investigated only under unipolar switching mode.
The resistive switching mode characterized in a memory device is strongly dependent on its structure.
The interfacial switching mode in this work offers the potential for multistate storage.
However, the interfacial switching mode was not observed in this single-layer device.
As a result, the ECM device will be operated in bipolar switching mode.
Under the bipolar resistive switching mode (curves 1 and 2) and the unipolar resistive switching mode (curves 1 and 3). Figure 3 shows the yield of the samples where the ZrO2 films were deposited at various temperatures.
The embedded ZrO2 − x layer is believed to be a crucial layer for the interfacial switching mode.
Figure 8 Device-to-device uniformities of ten samples fabricated at RT under the bipolar resistive switching mode.
Figure 8 shows device-to-device uniformities of ten samples fabricated at RT under the bipolar resistive switching mode.
Figure 7 shows the retention time of the sample fabricated at RT under the bipolar resistive switching mode.
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