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Resistive switching memory characteristics are explained here.
Resistive switching memory devices were fabricated on 8-in.
Fig. 5 White-light-induced resistive switching memory characteristics.
Inert Au top electrodes did not yield resistive switching memory properties, while Ag top electrodes provided conventional resistive switching memory properties, with sharp on and off switching operation.
Figure 11 shows typical program/erase (P/E) endurance characteristics of the resistive switching memory devices.
Figure 11 P/E endurance characteristics for (a) S1 and (b) S2 resistive switching memory devices.
The Al/ZrO2/Pt resistive switching memory was successfully fabricated at RT.
Fig. 1 a Schematic view of a W/WO3/WOx/W resistive switching memory device.
Finally, lift-off was performed to get the final resistive switching memory device.
(a) TEM image and (b) sidewall view of cross-point resistive switching memory.
This suggests an inferior thermal stability of Ge0.2Se0.8-based Ge0.2Se0.8-baseding memoresistiveswitching
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